Halftone phase shift photomask blank, making method, and halftone phase shift photomask

ABSTRACT

During reactive sputtering using a silicon-containing target, an inert gas, and a nitrogen-containing reactive gas, a hysteresis curve is drawn by sweeping the flow rate of the reactive gas, and plotting the sputtering voltage or current during the sweep versus the flow rate of the reactive gas. In the step of sputtering in a region corresponding to a range from more than the lower limit of reactive gas flow rate providing the hysteresis to less than the upper limit, the target power, the inert gas flow rate and/or the reactive gas flow rate is increased or decreased continuously or stepwise. The halftone phase shift film including a layer containing transition metal, silicon and nitrogen is improved in in-plane uniformity of optical properties.

CROSS-REFERENCE TO RELATED APPLICATION

This application is a Divisional application of co-pending applicationSer. No. 15/717,106, filed on Sep. 27, 2017, which claims the benefitunder 35 U.S.C. § 119(a) to Patent Application No. 2016-190088, filed inJapan on Sep. 28, 2016, all of which are hereby expressly incorporatedby reference into the present application.

TECHNICAL FIELD

This invention relates to a halftone phase shift photomask blank whichis processed into a photomask, typically halftone phase shift photomaskfor use in the microfabrication of semiconductor integrated circuits orthe like, a method for preparing the same, and a halftone phase shiftphotomask.

BACKGROUND ART

In the field of semiconductor technology, research and developmentefforts are continued for further miniaturization of pattern features.Recently, as advances including miniaturization of circuit patterns,thinning of interconnect patterns and miniaturization of contact holepatterns for connection between cell-constituting layers are in progressto comply with higher integration density of LSIs, there is anincreasing demand for the micropatterning technology. Accordingly, inconjunction with the technology for manufacturing photomasks used in theexposure step of the photolithographic microfabrication process, it isdesired to have a technique of forming a more fine and accurate circuitpattern or mask pattern.

In general, reduction projection is employed when patterns are formed onsemiconductor substrates by photolithography. Thus the size of patternfeatures formed on a photomask is about 4 times the size of patternfeatures formed on a semiconductor substrate. In the currentphotolithography technology, the size of circuit patterns printed issignificantly smaller than the wavelength of light used for exposure.Therefore, if a photomask pattern is formed simply by multiplying thesize of circuit pattern 4 times, the desired pattern is not transferredto a resist film on a semiconductor substrate due to opticalinterference and other effects during exposure.

Sometimes, optical interference and other effects during exposure aremitigated by forming the pattern on a photomask to a more complex shapethan the actual circuit pattern. Such a complex pattern shape may bedesigned, for example, by incorporating optical proximity correction(OPC) into the actual circuit pattern. Also, attempts are made to applythe resolution enhancement technology (RET) such as modifiedillumination, immersion lithography or double exposure (or doublepatterning) lithography, to meet the demand for miniaturization andhigher accuracy of patterns.

The phase shift method is used as one of the RET. The phase shift methodis by forming a pattern of film capable of phase reversal ofapproximately 180 degrees on a photomask, such that contrast may beimproved by utilizing optical interference. One of the photomasksadapted for the phase shift method is a halftone phase shift photomask.Typically, the halftone phase shift photomask includes a substrate ofquartz or similar material which is transparent to exposure light, and aphotomask pattern of halftone phase shift film formed on the substrate,capable of providing a phase shift of approximately 180 degrees andhaving an insufficient transmittance to contribute to pattern formation.As the halftone phase shift photomask, Patent Document 1 proposes aphotomask having a halftone phase shift film of molybdenum silicideoxide (MoSiO) or molybdenum silicide oxynitride (MoSiON).

For the purpose of forming finer images by photolithography, light ofshorter wavelength is used as the light source. In the currently mostadvanced stage of lithography process, the exposure light source hasmade a transition from KrF excimer laser (248 nm) to ArF excimer laser(193 nm). The lithography using ArF excimer laser light of greaterenergy was found to cause damages to the mask, which were not observedwith KrF excimer laser light. One problem is that on continuous use ofthe photomask, foreign matter-like growth defects form on the photomask.These growth defects are also known as “haze”. The source of hazeformation was formerly believed to reside in the growth of ammoniumsulfate crystals on the mask pattern surface. It is currently believedthat organic matter participates in haze formation as well.

Some approaches are known to overcome the haze problem. With respect tothe growth defects formed on the photomask upon long-term irradiation ofArF excimer laser light, for example, Patent Document 2 describes thatif the photomask is cleaned at a predetermined stage, then it can becontinuously used.

As the exposure dose of ArF excimer laser light irradiated for patterntransfer increases, the photomask is given damage different from haze;and the line width of the mask pattern changes in accordance with thecumulative irradiation energy dose, as reported in Non-PatentDocument 1. This problem is that as the cumulative irradiation energydose increases during long-term irradiation of ArF excimer laser light,a layer of a substance which is considered to be an oxide of the patternmaterial grows outside the film pattern, whereby the pattern widthchanges. It is also reported that the mask once damaged cannot berestored by cleaning with AMP (aqueous ammonia/hydrogen peroxide) asused in the above-mentioned haze removal or with SPM (sulfuricacid/hydrogen peroxide). It is believed that the damage source isutterly different.

Non-Patent Document 1 points out that upon exposure of a circuit patternthrough a halftone phase shift photomask which is the mask technologyuseful in expanding the depth of focus, substantial degradation isinduced by pattern size variation resulting from alteration of atransition metal/silicon base material film such as MoSi base materialfilm by irradiation of ArF excimer laser light (this degradation isreferred to as “pattern size variation degradation”). Then, in order touse an expensive photomask over a long period of time, it is necessaryto address the pattern size variation degradation by irradiation of ArFexcimer laser light.

The pattern size variation degradation by irradiation of ArF excimerlaser light scarcely occurs when light is irradiated in a dry airatmosphere, as reported in Non-Patent Document 1. Then the exposure indry air is considered a new countermeasure for preventing pattern sizevariation degradation. For control in a dry air atmosphere, however,extra equipment and an electrostatic countermeasure are newly needed,inviting a cost increase. It is thus necessary to enable long-termexposure in a common atmosphere (e.g., humidity ˜50%) without a need forcomplete removal of moisture.

Of the photomasks used in the lithography using ArF excimer laser lightas the energy source, the halftone phase shift photomasks generally usetransition metal/silicon base materials, typically molybdenum-containingsilicon base materials. The transition metal/silicon base materials arecomposed mainly of transition metal and silicon and optionally containlight elements such as nitrogen and/or oxygen (e.g., Patent Document 1)and traces of carbon and hydrogen. As the transition metal, molybdenum,zirconium, tantalum, tungsten and titanium are generally used.Typically, molybdenum is used (see Patent Document 1), and sometimes, asecond transition metal is added (see Patent Document 3). Also in thelight-shielding film, the transition metal/silicon base materials,typically molybdenum-containing silicon base materials are used.

However, when the photomask of such transition metal/silicon basematerial is exposed to a large dose of high-energy radiation, asubstantial pattern size variation degradation occurs by irradiation ofhigh-energy radiation, suggesting that the lifetime of the photomaskbecomes shorter than the requirement. It is a serious problem that whenthe photomask pattern of a transition metal/silicon base material filmis exposed to ArF excimer laser radiation, the photomask pattern forexposure experiences a change of line width.

CITATION LIST

-   Patent Document 1: JP-A H07-140635-   Patent Document 2: JP-A 2008-276002 (U.S. Pat. No. 7,941,767)-   Patent Document 3: JP-A 2004-133029-   Patent Document 4: JP-A 2007-033469-   Patent Document 5: JP-A 2007-233179-   Patent Document 6: JP-A 2007-241065-   Non-Patent Document 1: Thomas Faure et al., “Characterization of    binary mask and attenuated phase shift mask blanks for 32 nm mask    fabrication,” Proc. of SPIE, vol. 7122, pp 712209-1 to 712209-12

SUMMARY OF INVENTION

The photomask technology has the tendency that with a progress ofminiaturization, the pattern width becomes smaller than the wavelengthof exposure light. Accordingly, RET technologies such as OPC, modifiedillumination, immersion lithography, phase shift method, and doubleexposure are employed as mentioned above. With respect to the phaseshift film, a thinner film is advantageous for pattern formation andeffective for reducing 3D effect. For photolithography, a thinner filmis required in order to form a finer size pattern.

On use of a photomask blank in the photomask producing process, ifforeign deposits are on the photomask blank, they cause pattern defects.To remove foreign deposits, the photomask blank is cleaned many timesduring the photomask producing process. Further, when the resultingphotomask is used in the photolithography process, the photomask is alsorepeatedly cleaned even if the photomask as produced is free of patterndefects, for the reason that if foreign deposits settle on the photomaskduring the photolithography process, a semiconductor substrate which ispatterned using that photomask eventually bears pattern-transferfailures.

For removing foreign deposits from the photomask blank or photomask,chemical cleaning is applied in most cases, using SPM, ozone water orAMP. SPM is a sulfuric acid/hydrogen peroxide mixture which is acleaning agent having strong oxidizing action. Ozone water is waterhaving ozone dissolved therein and used as a replacement of SPM. AMP isan aqueous ammonia/hydrogen peroxide mixture. When the photomask blankor photomask having organic foreign deposits on its surface is immersedin the AMP cleaning liquid, the organic foreign deposits are liberatedand removed from the surface under the dissolving action of ammonia andthe oxidizing action of hydrogen peroxide.

Although the chemical cleaning with such chemical liquid is necessaryfor removing foreign deposits such as particles and contaminants on thephotomask blank or photomask, the chemical cleaning can damage anoptical film, typically halftone phase shift film, on the photomaskblank or photomask. For example, if the surface of an optical film isaltered by chemical cleaning, the optical properties that the filmoriginally possesses can be changed. In addition, chemical cleaning ofthe photomask blank or photomask is repeatedly carried out. It is thusnecessary to minimize any property change (e.g., phase shift change) ofthe optical film during every cleaning step. Among the films meeting theabove requirements are films comprising silicon, nitrogen and/or oxygen,and a low content of transition metal, for example, films consisting oftransition metal, silicon and nitrogen, and films consisting oftransition metal, silicon, nitrogen and oxygen, which have improvedchemical resistance.

In general, a thin film for forming a pattern on a photomask blank isdeposited by the sputtering method. For example, a film consisting oftransition metal, silicon and nitrogen is formed on a transparentsubstrate by a sputtering process which involves the steps of placingtargets selected from silicon-containing targets (e.g., silicon targetand transition metal/silicon target) and silicon-free, transitionmetal-containing targets (e.g., transition metal target) in a depositionchamber, feeding a gas mixture of a rare gas such as argon and nitrogengas to the chamber, applying an electric power to create a gas plasma,and letting the plasma atoms impinge the targets to sputter particles.Then sputtered particles react with nitrogen on their way or withnitrogen on the target surface or with nitrogen on the substrate. Theresulting transition metal/silicon/nitrogen compound deposits on thesubstrate. The nitrogen content of the transition metal/silicon/nitrogenfilm is controlled by changing the mixing ratio of nitrogen gas in thegas mixture. The process enables to deposit a transitionmetal/silicon/nitrogen film having any desired nitrogen content on atransparent substrate.

When a transition metal/silicon/nitrogen film is deposited using asilicon-containing target, however, stable film deposition becomesdifficult in a certain region, depending on the flow rate of nitrogengas in the gas mixture. In that region, it is difficult to control theoptical properties of the film including phase shift and transmittance.In particular, it is difficult to form a film having in-plane uniformityof optical properties at a predetermined transmittance while maintaininga predetermined phase shift, e.g., a phase shift of approximately 180°.

An object of the invention is to provide a halftone phase shiftphotomask blank comprising a halftone phase shift film containing atransition metal, silicon and nitrogen and having in-plane uniformity ofoptical properties, a method for preparing the photomask blank, and ahalftone phase shift photomask.

The invention is directed to a method for preparing a halftone phaseshift photomask blank having a halftone phase shift film on atransparent substrate, the method comprising the step of depositing alayer containing a transition metal, silicon and nitrogen on thetransparent substrate, as a part or the entirety of the halftone phaseshift film, by reactive sputtering using one or more silicon-containingtargets, an inert gas, and a nitrogen-containing reactive gas. It isassumed that a hysteresis curve is drawn by applying a power across thetarget, feeding the reactive gas into a chamber, increasing and thendecreasing the flow rate of the reactive gas for thereby sweeping theflow rate of the reactive gas, measuring a sputtering voltage or currentvalue across any one of silicon-containing targets, preferably thetarget having the highest silicon content, upon sweeping of the flowrate of the reactive gas, and plotting the sputtering voltage or currentvalue versus the flow rate of the reactive gas; and that the sputteringstep of sputtering in a (metal) region corresponding to a range equal toor less than the lower limit of reactive gas flow rate providing thehysteresis is referred to as “metal mode”, the sputtering step ofsputtering in a (transition) region corresponding to a range from morethan the lower limit of reactive gas flow rate providing the hysteresisto less than the upper limit is referred to as “transition mode”, andthe sputtering step of sputtering in a (reaction) region correspondingto a range equal to or more than the upper limit of reactive gas flowrate providing the hysteresis is referred to as “reaction mode”.According to the invention, in a part or the entirety of the transitionmode sputtering step, at least one parameter selected from the powerapplied across the target, the flow rate of the inert gas, and the flowrate of the reactive gas, especially the flow rate of the reactive gasis increased or decreased continuously or stepwise, preferablycontinuously, preferably such that the layer containing a transitionmetal, silicon and nitrogen is compositionally graded in thicknessdirection. Particularly in the entirety of the transition modesputtering step, the at least one parameter is increased or decreasedcontinuously. Then there is obtained a halftone phase shift film havingthe desired values of phase shift and transmittance and improveduniformity of in-plane distribution of phase shift and transmittance.That is, a halftone phase shift film having satisfactory in-planeuniformity of optical properties can be deposited on a transparentsubstrate in a reproducible manner.

Accordingly, in one aspect, the invention provides a method forpreparing a halftone phase shift photomask blank having a halftone phaseshift film on a transparent substrate, the method comprising the step ofdepositing a layer containing a transition metal, silicon and nitrogenon the transparent substrate, as a part or the entirety of the halftonephase shift film, by reactive sputtering using one or moresilicon-containing targets, an inert gas, and a nitrogen-containingreactive gas. Provided that a hysteresis curve is drawn by applying apower across the one or more silicon-containing targets, feeding thereactive gas into a chamber, increasing and then decreasing the flowrate of the reactive gas for thereby sweeping the flow rate of thereactive gas, measuring a sputtering voltage or current value across anyone target upon sweeping of the flow rate of the reactive gas, andplotting the sputtering voltage or current value versus the flow rate ofthe reactive gas, the step of depositing a layer containing a transitionmetal, silicon and nitrogen includes a transition mode sputtering stepof sputtering in a region corresponding to a range from more than thelower limit of reactive gas flow rate providing the hysteresis to lessthan the upper limit, and in a part or the entirety of the transitionmode sputtering step, at least one parameter selected from the powerapplied across the target, the flow rate of the inert gas, and the flowrate of the reactive gas is increased or decreased continuously orstepwise.

Preferably, the hysteresis curve is drawn by measuring a sputteringvoltage or current value across the target having the highest siliconcontent among the one or more silicon-containing targets.

Preferably, the one or more silicon-containing targets are selected fromtargets containing silicon, but not a transition metal and targetscontaining a transition metal and silicon.

Also preferably, a target containing silicon and a target containing atransition metal, but not silicon are used.

Preferably, in the transition mode sputtering step, sputtering iscarried out while at least one parameter selected from the power appliedacross the target, the flow rate of the inert gas, and the flow rate ofthe reactive gas is increased or decreased continuously such that thelayer containing transition metal, silicon and nitrogen may becompositionally graded in thickness direction.

Preferably, in the entirety of the transition mode sputtering step,sputtering is carried out while at least one parameter selected from thepower applied across the target, the flow rate of the inert gas, and theflow rate of the reactive gas is increased or decreased continuously.

Preferably, in the transition mode sputtering step, sputtering iscarried out while the flow rate of the reactive gas is increased ordecreased.

Preferably, the step of depositing a layer containing a transitionmetal, silicon and nitrogen includes a reaction mode sputtering step ofsputtering in a region corresponding to a range equal to or more thanthe upper limit of reactive gas flow rate providing the hysteresis, andthe transition mode sputtering step is followed by the reaction modesputtering step, or the reaction mode sputtering step is followed by thetransition mode sputtering step.

Preferably, in a part or the entirety of the reaction mode sputteringstep, sputtering is carried out while at least one parameter selectedfrom the power applied across the target, the flow rate of the inertgas, and the flow rate of the reactive gas is increased or decreasedcontinuously or stepwise.

Preferably, from the transition mode sputtering step to the reactionmode sputtering step, or from the reaction mode sputtering step to thetransition mode sputtering step, sputtering is carried out while atleast one parameter selected from the power applied across the target,the flow rate of the inert gas, and the flow rate of the reactive gas isincreased or decreased continuously.

Preferably, the step of depositing a layer containing a transitionmetal, silicon and nitrogen includes a metal mode sputtering step ofsputtering in a region corresponding to a range equal to or less thanthe lower limit of reactive gas flow rate providing the hysteresis, andthe metal mode sputtering step is followed by the transition modesputtering step, or the transition mode sputtering step is followed bythe metal mode sputtering step.

Preferably, in a part or the entirety of the metal mode sputtering step,sputtering is carried out while at least one parameter selected from thepower applied across the target, the flow rate of the inert gas, and theflow rate of the reactive gas is increased or decreased continuously orstepwise.

Preferably, from the metal mode sputtering step to the transition modesputtering step, or from the transition mode sputtering step to themetal mode sputtering step, sputtering is carried out while at least oneparameter selected from the power applied across the target, the flowrate of the inert gas, and the flow rate of the reactive gas isincreased or decreased continuously.

Typically, the inert gas is argon gas and the reactive gas is nitrogengas.

Preferably, the layer containing a transition metal, silicon andnitrogen consists of a transition metal, silicon and nitrogen.

Typically, the transition metal is molybdenum.

In another aspect, the invention provides a halftone phase shiftphotomask blank comprising a transparent substrate and a halftone phaseshift film formed thereon, wherein the halftone phase shift filmincludes as a part or the entirety thereof a layer containing atransition metal, silicon and nitrogen, said layer includes a regionwhere an atomic ratio of transition metal (Me) to the sum of silicon andtransition metal, Me/(Si+Me), is up to 0.05, and an atomic ratio ofnitrogen to the sum of silicon and nitrogen, N/(Si+N), continuouslyvaries in a range between 0.30 and 0.57 in thickness direction.

Another embodiment of the invention is a halftone phase shift photomaskblank comprising a transparent substrate and a halftone phase shift filmformed thereon, wherein the halftone phase shift film includes as a partor the entirety thereof a layer containing a transition metal, siliconand nitrogen wherein an atomic ratio of transition metal to the sum ofsilicon and transition metal, Me/(Si+Me), is up to 0.05, the halftonephase shift film exhibits a phase shift of 170 to 190° and atransmittance of 2 to 12% with respect to exposure light of wavelength193 nm, a difference between maximum and minimum in phase shift in-planedistribution being up to 3°, and a difference between maximum andminimum in transmittance in-plane distribution being up to 5% based onin-plane average value, and has a thickness of up to 67 nm.

In a preferred embodiment, the layer containing a transition metal,silicon and nitrogen includes a region where an atomic ratio of nitrogento the sum of silicon and nitrogen, N/(Si+N), continuously varies inthickness direction.

In a preferred embodiment, the layer containing a transition metal,silicon and nitrogen includes a region where the atomic ratio ofnitrogen to the sum of silicon and nitrogen, N/(Si+N), continuouslyvaries in a range between 0.30 and 0.57 in thickness direction.

In a preferred embodiment, the layer containing a transition metal,silicon and nitrogen includes a region where the atomic ratio ofnitrogen to the sum of silicon and nitrogen, N/(Si+N), continuouslyvaries in a range between 0.40 and 0.54 in thickness direction.

Preferably, in the layer containing a transition metal, silicon andnitrogen, the difference between maximum and minimum of the atomic ratioof silicon to the sum of silicon and nitrogen, Si/(Si+N), in thicknessdirection is up to 0.25.

In a preferred embodiment, the layer containing a transition metal,silicon and nitrogen consists of a transition metal, silicon andnitrogen. Typically, the transition metal is molybdenum.

Also contemplated herein is a halftone phase shift photomask preparedfrom the halftone phase shift photomask blank defined above.

Advantageous Effects of Invention

The halftone phase shift photomask blank (or photomask obtainedtherefrom) comprises a halftone phase shift film including a layercontaining a transition metal, silicon and nitrogen and having chemicalresistance. The halftone phase shift film is improved in in-planeuniformity of optical properties while maintaining the predeterminedvalues of phase shift and transmittance.

BRIEF DESCRIPTION OF DRAWINGS

FIGS. 1A and 1B are cross-sectional views of one exemplary halftonephase shift photomask blank and a corresponding halftone phase shiftphotomask of the invention, respectively.

FIGS. 2A, 2B and 2C are cross-sectional views of further embodiments ofthe halftone phase shift photomask blank of the invention.

FIG. 3 is a diagram showing a hysteresis curve drawn in Example 1.

FIG. 4 is a diagram showing a hysteresis curve drawn in ComparativeExample 1.

DESCRIPTION OF PREFERRED EMBODIMENTS

According to the invention, a halftone phase shift photomask blank isprepared by reactive sputtering of one or more silicon-containingtargets with an inert gas and a reactive gas containing nitrogen todeposit a layer containing a transition metal, silicon and nitrogen as apart or the entirety of a halftone phase shift film on a transparentsubstrate. In the step of depositing the layer containing a transitionmetal, silicon and nitrogen, the depositing or sputtering conditions areset on the basis of a hysteresis curve that is drawn by applying a poweracross the target, feeding the reactive gas into a chamber, increasingand then decreasing the flow rate of the reactive gas for therebysweeping the flow rate of the reactive gas, measuring a sputteringvoltage or current value (target voltage or current value) across anyone silicon-containing target, preferably the target having the highestsilicon content, upon sweeping of the flow rate of the reactive gas, andplotting the sputtering voltage or current value versus the flow rate ofthe reactive gas. It is noted that when there are included two or moretargets having the highest silicon content, the depositing or sputteringconditions are preferably set on the basis of a hysteresis curve whichis drawn by measuring a sputtering voltage or current value across thetarget having a lower conductivity.

In an experiment, reactive sputtering is performed in a chamber invacuum or reduced pressure using a target, an inert gas and a reactivegas. While the power applied across the target and the flow rate of theinert gas are kept constant, the flow rate of the reactive gas isgradually increased from the zero gas feed state. As the flow rate ofthe reactive gas is increased, the sputtering voltage (i.e., targetvoltage) gradually declines. The voltage behavior is such that thevoltage follows a slow decline (at a gentle slope) at the initial, arapid decline (at a sharp slope) midway, and finally a slow decline (ata gentle slope) again. After the flow rate of the reactive gas isincreased over the range where the voltage takes a slow decline again,inversely the flow rate of the reactive gas is decreased. As the flowrate of the reactive gas is decreased, the sputtering voltage (i.e.,target voltage) gradually increases. At this stage, the voltage behavioris such that the voltage follows a slow increase (at a gentle slope) atthe initial, a rapid increase (at a sharp slope) midway, and finally aslow increase (at a gentle slope) again. In the region of the rapiddecline or increase (at a sharp slope), the sputtering voltage recordedduring the ascent of reactive gas flow rate is not coincident with thesputtering voltage recorded during the descent of reactive gas flowrate, specifically the sputtering voltage recorded during the descent ofreactive gas flow rate is lower.

In another experiment, reactive sputtering is performed in a chamber invacuum or reduced pressure using a target, an inert gas and a reactivegas. While the power applied across the target and the flow rate of theinert gas are kept constant, the flow rate of the reactive gas isgradually increased from the zero gas feed state. As the flow rate ofthe reactive gas is increased, the sputtering current (i.e., targetcurrent) gradually increases. The current behavior is such that thecurrent follows a slow increase (at a gentle slope) at the initial, arapid increase (at a sharp slope) midway, and finally a slow increase(at a gentle slope) again. After the flow rate of the reactive gas isincreased over the range where the current takes a slow increase again,inversely the flow rate of the reactive gas is decreased. As the flowrate of the reactive gas is decreased, the sputtering current (i.e.,target current) gradually declines. At this stage, the current behavioris such that the current follows a slow decline (at a gentle slope) atthe initial, a rapid decline (at a sharp slope) midway, and finally aslow decline (at a gentle slope) again. In the region of the rapidincrease or decline (at a sharp slope), the sputtering current recordedduring the ascent of reactive gas flow rate is not coincident with thesputtering current recorded during the descent of reactive gas flowrate, specifically the sputtering current recorded during the descent ofreactive gas flow rate is higher.

As is evident from the above reactive sputtering experiments, ahysteresis curve as shown in FIGS. 3 and 4, for example, and similar tothe well-known magnetic hysteresis curve (B-H curve), is drawn byapplying a constant power across the target, feeding an inert gas at aconstant flow rate into a chamber, feeding the reactive gas into thechamber, increasing and then reducing the flow rate of the reactive gasfor thereby sweeping the flow rate of the reactive gas, measuring asputtering voltage or current value upon sweeping of the flow rate ofthe reactive gas, and plotting the sputtering voltage or current valueversus the flow rate of the reactive gas, for the reason that thesputtering voltage or current value is not coincident between the ascentand the descent of reactive gas flow rate.

The hysteresis curve is delineated by the sputtering voltage or currentrecorded during the ascent of the reactive gas flow rate and thesputtering voltage or current recorded during the descent of thereactive gas flow rate. A hysteresis region is defined by the curvesegments. In the hysteresis region, the lower and upper limits of theflow rate of reactive gas correspond to the points where the sputteringvoltage or current value recorded during the ascent of reactive gas flowrate and the sputtering voltage or current value recorded during thedescent of reactive gas flow rate become substantially coincident.Specifically, on the assumption that a percent change is determined fromthe formula (1-1):

(V_(A)−V_(D))/{(V_(A)+V_(D))/2}×100  (1-1)

wherein V_(A) is a sputtering voltage value recorded during the ascentof reactive gas flow rate and V_(D) is a sputtering voltage valuerecorded during the descent of reactive gas flow rate, or a percentchange is determined from the formula (1-2):

(I_(D)−I_(A))/{(I_(A)+I_(D))/2}×100  (1-2)

wherein I_(A) is a sputtering current value recorded during the ascentof reactive gas flow rate and I_(D) is a sputtering current valuerecorded during the descent of reactive gas flow rate, the points whenthe percent change of formula (1-1) or (1-2) gradually decreases fromthe center of the hysteresis region toward the lower or upper limitside, and reaches 1% or less, especially substantially zero, are thelower and upper limits of the reactive gas flow rate in the hysteresisregion (transition region).

As the sputtering voltage value V_(L) at the lower limit of reactive gasflow rate in the hysteresis region and the sputtering voltage valueV_(H) at the upper limit of reactive gas flow rate in the hysteresisregion, an average value of sputtering voltages recorded during theascent of reactive gas flow rate and an average value of sputteringvoltages recorded during the descent of reactive gas flow rate areapplicable, respectively. Likewise, as the sputtering current valueI_(L) at the lower limit of reactive gas flow rate in the hysteresisregion and the sputtering current value hi at the upper limit ofreactive gas flow rate in the hysteresis region, an average value ofsputtering currents recorded during the ascent of reactive gas flow rateand an average value of sputtering currents recorded during the descentof reactive gas flow rate are applicable, respectively.

In conjunction with the hysteresis curve, a region where the reactivegas flow rate is equal to or less than the lower limit of the hysteresisregion is referred to as “metal mode”, a region where the reactive gasflow rate is equal to or more than the upper limit of the hysteresisregion is referred to as “reaction mode”, and a region between the metalmode and the reaction mode is referred to as “transition mode.” It isbelieved that during sputtering in the metal mode where the reactive gasflow rate is equal to or below the lower limit of the hysteresis region,the erosion portion of the target surface is maintained in the state notcovered with the reaction product of reactive gas. During sputtering inthe reaction mode where the reactive gas flow rate is equal to or abovethe upper limit of the hysteresis region, the target surface reacts withthe reactive gas so that the target surface is completely covered withthe reaction product of reactive gas. During sputtering in thetransition mode where the reactive gas flow rate is above the lowerlimit and below the upper limit of the hysteresis region, the erosionportion of the target surface is partially covered with the reactionproduct of reactive gas.

The invention is most effective when there is obtained a hysteresiscurve ensuring that a percent change of voltage determined from thesputtering voltage value V_(L) at the lower limit of the reactive gasflow rate in the hysteresis region and the sputtering voltage valueV_(H) at the upper limit of the reactive gas flow rate in the hysteresisregion according to the formula (2-1):

(V_(L)−V_(H))/{(V_(L)+V_(H))/2}×100  (2-1)

or a percent change of current determined from the sputtering currentvalue I_(L) at the lower limit of the reactive gas flow rate in thehysteresis region and the sputtering current value hi at the upper limitof the reactive gas flow rate in the hysteresis region according to theformula (2-2):

(I_(H)−I_(L))/{(I_(L)+I_(H))/2}×100  (2-2)

is at least 5%, especially at least 15%.

Also the invention is most effective when there is obtained a hysteresiscurve ensuring that the difference (in absolute value) between thesputtering voltage value V_(A) recorded during the ascent of thereactive gas flow rate and the sputtering voltage value V_(D) recordedduring the descent of the reactive gas flow rate as averages between thelower and upper limits of the reactive gas flow rate in the hysteresisregion is at least 5%, especially at least 10% of the difference (inabsolute value) between the sputtering voltage value V_(L) at the lowerlimit of the reactive gas flow rate in the hysteresis region and thesputtering voltage value V_(H) at the upper limit of the reactive gasflow rate in the hysteresis region; or the difference (in absolutevalue) between the sputtering current value I_(A) recorded during theascent of the reactive gas flow rate and the sputtering current valueI_(D) recorded during the descent of the reactive gas flow rate asaverages between the lower and upper limits of the reactive gas flowrate in the hysteresis region is at least 5%, especially at least 10% ofthe difference (in absolute value) between the sputtering current valueI_(L) at the lower limit of the reactive gas flow rate in the hysteresisregion and the sputtering current value hi at the upper limit of thereactive gas flow rate in the hysteresis region.

It is noted that in both the metal and reaction modes, the sputteringvoltage or current value recorded during the ascent of the reactive gasflow rate is substantially coincident with the sputtering voltage orcurrent value recorded during the descent of the reactive gas flow rate.

For the photomask blank, the in-plane uniformity of a film is important.As the halftone phase shift film, a film containing silicon is generallyused. Oxygen, nitrogen or the like must be added to a transitionmetal/silicon-containing film in order to provide the film with acertain transmittance. To form a transition metal/silicon-containingfilm having a predetermined phase shift and a predeterminedtransmittance, in some cases, the film must be sputter deposited in thetransition mode. Film deposition in the transition mode, however, tendsto degrade in-plane uniformity. In particular, the transitionmetal/silicon-containing film which is provided with a predeterminedtransmittance by reducing the transition metal content must be sputterdeposited in the transition mode.

According to the invention, the method for preparing a halftone phaseshift photomask blank involves the step of depositing a layer containinga transition metal, silicon and nitrogen. The step of depositing a layercontaining a transition metal, silicon and nitrogen includes atransition mode sputtering step of sputtering in a sputtering state in aregion corresponding to a range from more than the lower limit ofreactive gas flow rate providing the hysteresis to less than the upperlimit. In a part or the entirety, preferably the entirety of thetransition mode sputtering step, at least one parameter selected fromthe power applied across the target, the flow rate of the inert gas, andthe flow rate of the reactive gas, especially the flow rate of thereactive gas is increased or decreased continuously or stepwise,preferably continuously, so that the composition of the transitionmetal/silicon/nitrogen-containing layer is graded in thicknessdirection. In this way, the halftone phase shift film is formed. Withrespect to halftone phase shift films containing a transition metal,silicon and nitrogen, specifically films containing a low content oftransition metal, silicon and nitrogen, it is difficult in the prior artthat a film meeting a predetermined phase shift and transmittance,specifically a phase shift of 170 to 190° and a transmittance of 2 to12% relative to exposure light of wavelength 193 nm and having highin-plane uniformity is deposited to a thickness of up to 70 nm,especially up to 67 nm. However, when sputter deposition is performedunder the conditions defined herein, a halftone phase shift film havingimproved in-plane uniformity of optical properties such as phase shiftand transmittance is obtained. Specifically the halftone phase shiftfilm is improved such that the difference between maximum and minimum ofphase shift in its in-plane distribution is up to 3°, preferably up to2°, and more preferably up to 1°, and the difference between maximum andminimum of transmittance in its in-plane distribution is up to 5%,preferably up to 4%, and more preferably up to 3% of the in-planeaverage.

With respect to film deposition by the transition mode sputtering step,where the halftone phase shift film is a single layer structure, theoverall single layer is preferably deposited by the transition modesputtering step. Where the halftone phase shift film is a multilayerstructure, a portion corresponding to at least 10%, more preferably atleast 20%, even more preferably at least 25% of the thickness of thefilm excluding a surface oxidized layer (if any) is preferably depositedby the transition mode sputtering step.

In a preferred embodiment wherein the step of depositing a layercontaining a transition metal, silicon and nitrogen is solely atransition mode sputtering step, a film having better in-planeuniformity is obtainable. For example, in the case of a film having aphase shift of 170 to 190° relative to exposure light, specifically afilm consisting of transition metal, silicon and nitrogen or a filmconsisting of transition metal, silicon, nitrogen and oxygen, a halftonephase shift film having a transmittance of 3 to 12% relative to exposurelight may be deposited.

Although it is difficult in the prior art to form a transitionmetal/silicon/nitrogen-containing film (typically low transition metalcontent) having in-plane uniformity of optical properties such as phaseshift and transmittance, the method of the invention makes it possibleto form a halftone phase shift film having a phase shift of 170 to 190°,specifically 175 to 185°, most specifically substantially 180° and atransmittance of up to 30%, specifically up to 15%, more specifically upto 10%, and at least 2%, specifically at least 3%, more specifically atleast 5%, relative to exposure light of wavelength up to 250 nm,especially up to 200 nm, typically ArF excimer laser light (wavelength193 nm) and featuring better in-plane uniformity of such opticalproperties. In the invention, parameters for sputter deposition includeflow rates of reactive gases such as nitrogen gas and oxygen gas, flowrates of inert gases such as argon gas, helium gas and neon gas,especially argon gas, and a power applied across the target forsputtering.

In a preferred embodiment, the step of depositing a transitionmetal/silicon/nitrogen-containing layer further includes a reaction modesputtering step of sputtering in a sputtering state in a regioncorresponding to a range equal to or above the upper limit of reactivegas flow rate providing the hysteresis. Specifically, the transitionmode sputtering step is followed by the reaction mode sputtering step,or the reaction mode sputtering step is followed by the transition modesputtering step. By involving the reaction mode sputtering step in thestep of depositing a transition metal/silicon/nitrogen-containing layer,a halftone phase shift film having a higher transmittance may bedeposited. For example, in the case of a film having a phase shift of170 to 190° relative to exposure light, specifically a film consistingof transition metal, silicon and nitrogen, the reaction mode sputteringstep, if involved, makes it possible to deposit a halftone phase shiftfilm having a transmittance of 5 to 12% relative to exposure light.

In a preferred embodiment, in a part or the entirety, more preferablythe entirety of the reaction mode sputtering step, at least oneparameter selected from the power applied across the target, the flowrate of the inert gas, and the flow rate of the reactive gas, especiallythe flow rate of the reactive gas is increased or decreased continuouslyor stepwise, more preferably continuously, preferably so that thecomposition of the transition metal/silicon/nitrogen-containing layer isgraded in thickness direction. Preferably, a transfer from thetransition mode sputtering step to the reaction mode sputtering step, ora transfer from the reaction mode sputtering step to the transition modesputtering step is made continuous without interrupting the sputteringdischarge because a film having better adhesion can be formed.

From the transition mode sputtering step to the reaction mode sputteringstep, or from the reaction mode sputtering step to the transition modesputtering step, especially at the step-to-step boundary, furtherespecially throughout the steps, sputtering is preferably carried outwhile at least one parameter selected from the power applied across thetarget, the flow rate of inert gas, and the flow rate of reactive gas isincreased or decreased continuously.

In another preferred embodiment, the step of depositing a transitionmetal/silicon/nitrogen-containing layer further includes a metal modesputtering step of sputtering in a sputtering state in a regioncorresponding to a range equal to or below the lower limit of reactivegas flow rate providing the hysteresis. Specifically, the metal modesputtering step is followed by the transition mode sputtering step, orthe transition mode sputtering step is followed by the metal modesputtering step. By involving the metal mode sputtering step in the stepof depositing a transition metal/silicon/nitrogen-containing layer, ahalftone phase shift film having a lower transmittance may be deposited.For example, in the case of a film having a phase shift of 170 to 190°relative to exposure light, specifically a film consisting of transitionmetal, silicon and nitrogen or a film consisting of transition metal,silicon, nitrogen and oxygen, the metal mode sputtering step, ifinvolved, makes it possible to deposit a halftone phase shift filmhaving a transmittance of 2 to 10% relative to exposure light.

In a preferred embodiment, in a part or the entirety, more preferablythe entirety of the metal mode sputtering step, at least one parameterselected from the power applied across the target, the flow rate of theinert gas, and the flow rate of the reactive gas, especially the flowrate of the reactive gas is increased or decreased continuously orstepwise, more preferably continuously, preferably so that thecomposition of the transition metal/silicon/nitrogen-containing layer isgraded in thickness direction. Preferably, a transfer from thetransition mode sputtering step to the metal mode sputtering step, or atransfer from the metal mode sputtering step to the transition modesputtering step is made continuous without interrupting the sputteringdischarge because a film having better adhesion can be formed.

From the transition mode sputtering step to the metal mode sputteringstep, or from the metal mode sputtering step to the transition modesputtering step, especially at the step-to-step boundary, furtherespecially throughout the steps, sputtering is preferably carried outwhile at least one parameter selected from the power applied across thetarget, the flow rate of inert gas, and the flow rate of reactive gas isincreased or decreased continuously.

The transition metal/silicon/nitrogen-containing layer in the halftonephase shift film is constructed of a material containing a transitionmetal, silicon and nitrogen. The material containing a transition metal,silicon and nitrogen is preferably a transition metal/silicon basematerial containing at least 90 at %, more preferably at least 94 at %of transition metal, silicon and nitrogen in total. The silicon basematerial may further contain oxygen, carbon or another element, withlower contents of oxygen and carbon being preferred. Exemplarytransition metal/silicon base materials include materials consisting oftransition metal, silicon and nitrogen, materials consisting oftransition metal, silicon, nitrogen and oxygen, materials consisting oftransition metal, silicon, nitrogen, and carbon, and materialsconsisting of transition metal, silicon, nitrogen, oxygen and carbon.Preferably the transition metal/silicon/nitrogen-containing layer is ofa material consisting of transition metal, silicon and nitrogen or amaterial consisting of transition metal, silicon, nitrogen and oxygen,because of further improvements in chemical resistance and resistance tolaser irradiation. Most preferably, the layer is of a materialconsisting of transition metal, silicon and nitrogen because the filmmay be reduced in thickness.

The transition metal/silicon/nitrogen-containing layer in the halftonephase shift film is deposited by the sputtering method capable offorming a film of homogeneity while either DC sputtering or RFsputtering may be employed. The target and sputtering gas may beselected as appropriate depending on the arrangement and composition oflayers. One or more targets are used while they may be selected fromsilicon-containing targets including targets containing silicon, but nottransition metal, and targets containing silicon and transition metal.

Suitable targets containing silicon, but not transition metal include asilicon target (Si target), silicon nitride target, and targetscontaining silicon and silicon nitride. Inter alia, silicon base targets(e.g., having a silicon content of at least 90 at %) are preferred, withthe silicon target being most preferred. Suitable targets containingsilicon and transition metal include a transition metal/silicon target,targets containing transition metal and silicon, a transitionmetal/silicon nitride target, and targets containing silicon and/orsilicon nitride and transition metal and/or transition metal nitride.Inter alia, transition metal/silicon base targets (e.g., having a totalcontent of transition metal and silicon of at least 90 at %) arepreferred, with the transition metal/silicon targets being mostpreferred.

In the sputter deposition of a transitionmetal/silicon/nitrogen-containing layer, a target containing transitionmetal, but not silicon may be used along with the silicon-containingtarget. Suitable transition metal-containing targets include atransition metal target, transition metal nitride target, and targetscontaining transition metal and transition metal nitride. Inter alia,transition metal base targets (e.g., having a transition metal contentof at least 90 at %) are preferred, with the transition metal targetbeing most preferred.

Applicable as the target herein are a single target containingtransition metal and silicon, a combination of two or more targetscontaining transition metal and silicon, a combination of a targetcontaining silicon, but not transition metal with a target containingtransition metal and silicon, a combination of a target containingsilicon, but not transition metal with a target containing transitionmetal, but not silicon, a combination of a target containing transitionmetal and silicon with a target containing transition metal, but notsilicon, a combination of a target containing transition metal andsilicon, a target containing transition metal, but not silicon, and atarget containing silicon, but not transition metal. Inter alia, asingle target containing transition metal and silicon, a combination oftwo or more targets containing transition metal and silicon, and acombination of a target containing silicon, but not transition metalwith a target containing transition metal and silicon are preferred forthe purpose of reducing the transition metal content. Also, acombination of a target containing silicon, but not transition metalwith a target containing transition metal and silicon is preferred forthe purpose of varying the concentration of transition metal and siliconin the film.

With respect to the target containing transition metal and silicon, whena single target containing transition metal and silicon or a combinationof two or more targets containing transition metal and silicon are used,or when a target containing transition metal and silicon is used and atarget containing silicon, but not transition metal is not used, thosetargets having an atomic ratio of transition metal/silicon of up to0.1/1, especially up to 0.05/1 are preferred. On the other hand, whenboth a target containing transition metal and silicon and a targetcontaining silicon, but not transition metal are used, those targetshaving an atomic ratio of transition metal/silicon of up to 0.95/1,especially at least 0.005/1 are preferred.

The content of nitrogen and the contents of oxygen and carbon may beadjusted by using a nitrogen-containing gas and optionally, anoxygen-containing gas, nitrogen/oxygen-containing gas orcarbon-containing gas as the reactive gas, and adjusting the flow rateof such gas during reactive sputtering. Suitable reactive gases includenitrogen gas (N₂ gas), oxygen gas (O₂ gas), nitrogen oxide gases (N₂Ogas, NO gas, NO₂ gas), and carbon oxide gases (CO gas, CO₂ gas). Thereactive gas essential as a nitrogen source is preferably nitrogen gas.In the sputtering gas, a rare gas such as helium, neon or argon gas maybe used as the inert gas. The preferred inert gas is argon gas. Thesputtering pressure is typically 0.01 to 1 Pa, preferably 0.03 to 0.2Pa.

The halftone phase shift photomask blank of the invention may beprepared by forming a halftone phase shift film on a transparentsubstrate and heat treating or annealing at a temperature of at least400° C. for at least 5 minutes. The heat treatment of the halftone phaseshift film after deposition is preferably by heating the halftone phaseshift film as deposited on the substrate at a temperature of at least400° C., more preferably at least 450° C. for a time of at least 5minutes, more preferably at least 30 minutes. The heat treatmenttemperature is preferably up to 900° C., more preferably up to 700° C.,and the heat treatment time is preferably up to 24 hours, morepreferably up to 12 hours. Heat treatment may be performed in thesputtering chamber or after transfer from the sputtering chamber to aheat treatment furnace. The heat treatment atmosphere may be an inertgas atmosphere such as helium gas or argon gas, vacuum, or even anoxygen-containing atmosphere such as oxygen gas atmosphere.

The halftone phase shift film may include a surface oxidized layer asthe outermost layer (surface side of the film remote from the substrate)in order to suppress any alteration of the film. The surface oxidizedlayer may have an oxygen content of at least 20 at %, with even anoxygen content of at least 50 at % being acceptable. The surfaceoxidized layer may be formed by atmospheric or air oxidation or forcedoxidative treatment. Examples of forced oxidative treatment includetreatment of a transition metal/silicon-based material film with ozonegas or ozone water, and heating of a film at 300° C. or higher in anoxygen-containing atmosphere such as oxygen gas atmosphere by ovenheating, lamp annealing or laser heating. The surface oxidized layerpreferably has a thickness of up to 10 nm, more preferably up to 5 nm,and even more preferably up to 3 nm. The oxidized layer exerts itseffect as long as its thickness is at least 1 nm. Although the surfaceoxidized layer may also be formed by increasing the amount of oxygen inthe sputtering gas during the sputtering step, atmospheric oxidation oroxidative treatment after deposition is preferred for forming a lessdefective layer.

While the halftone phase shift photomask blank is defined as having ahalftone phase shift film (as defined above) on a transparent substrate,the substrate is not particularly limited in its type and size. Thetransparent substrate is typically a quartz substrate which istransparent to the wavelength of commonly used exposure light.Preference is given to transparent substrates of 6 inch squares and 25mil thick, known as 6025 substrate, as prescribed in the SEMI standards,or transparent substrates of 152 mm squares and 6.35 mm thick whenexpressed in the SI units. The halftone phase shift photomask has a(photo)mask pattern of the halftone phase shift film.

FIG. 1A is a cross-sectional view of a halftone phase shift photomaskblank in one embodiment of the invention. The halftone phase shiftphotomask blank 100 includes a transparent substrate 10 and a halftonephase shift film 1 formed thereon. FIG. 1B is a cross-sectional view ofa halftone phase shift photomask in one embodiment of the invention. Thehalftone phase shift photomask 101 includes a transparent substrate 10and a halftone phase shift film pattern 11 thereon.

The exposure light used herein is preferably light of wavelength 250 nmor shorter, especially 200 nm or shorter, such as ArF excimer laserlight (wavelength 193 nm) or F₂ laser light (wavelength 157 nm), withthe ArF excimer laser light (193 nm) being most preferred.

The phase shift of the halftone phase shift film with respect toexposure light is such that a phase shift between the exposure lighttransmitted by a region of phase shift film (phase shift region) and theexposure light transmitted by a neighboring region where the phase shiftfilm is removed, causes interference of exposure light at the boundarywhereby contrast is increased. Specifically the phase shift is 150 to200 degrees. Although ordinary halftone phase shift films are set to aphase shift of approximately 180°, it is possible from the standpoint ofcontrast enhancement to adjust the phase shift below or beyond 180°. Forexample, setting a phase shift of smaller than 180° is effective forforming a thinner film. It is a matter of course that a phase shiftcloser to 180° is more effective because a higher contrast is available.In this regard, the phase shift is preferably 170 to 190°, morepreferably 175 to 185°, and most preferably approximately 180°.

The halftone phase shift film has a transmittance of exposure lightwhich is preferably at least 2%, more preferably at least 3%, even morepreferably at least 5%, and up to 30%, more preferably up to 15%, evenmore preferably up to 10%.

The (overall) thickness of the halftone phase shift film shouldpreferably be up to 70 nm, more preferably up to 67 nm, even morepreferably up to 65 nm, and most preferably up to 63 nm, because athinner film facilitates to form a finer pattern. The lower limit of thefilm thickness is set in the range where the desired optical propertiesare obtained relative to exposure light. Most often the film thicknessis set at least 40 nm, though the lower limit is not critical.

The halftone phase shift film should preferably have a refractive indexn of at least 2.3, more preferably at least 2.5, and even morepreferably at least 2.6 with respect to the exposure light as theoverall halftone phase shift film excluding the surface oxidized layerif any. By reducing the oxygen content of a halftone phase shift film(if the transition metal/silicon/nitrogen-containing layer containsoxygen), preferably by eliminating oxygen from the film, the refractiveindex n of the film can be increased while maintaining the predeterminedtransmittance, and the thickness of the film can be reduced whilemaintaining the necessary phase shift for the phase shift function.Moreover, the refractive index n becomes higher as the oxygen content islower, and the necessary phase shift is available from a thinner film asthe refractive index n is higher.

The halftone phase shift film should preferably have an extinctioncoefficient k of at least 0.2, especially at least 0.4, and up to 1.0,especially up to 0.7 with respect to the exposure light as the overallhalftone phase shift film excluding the surface oxidized layer if any.

While the halftone phase shift film includes the transitionmetal/silicon/nitrogen-containing layer (defined above) as a part or theentirety thereof, the transition metal/silicon/nitrogen-containing layerpreferably includes a region where an atomic ratio of nitrogen to thesum of silicon and nitrogen, N/(Si+N), varies continuously or stepwise,preferably continuously, in thickness direction, more preferably aregion where an atomic ratio of nitrogen to the sum of silicon andnitrogen, N/(Si+N), varies in a range of at least 0.30, morespecifically at least 0.40 and up to 0.57, more specifically up to 0.54,continuously or stepwise, preferably continuously, in thicknessdirection. The region may also be referred to as a compositionallygraded region. The halftone phase shift film of such construction isespecially improved in in-plane uniformity and can be formed by theinventive method.

In a preferred embodiment of the halftone phase shift film, the overallhalftone phase shift film excluding the surface oxidized layer if any isconstructed by the transition metal/silicon/nitrogen-containing layer,which preferably includes a region where the atomic ratio N/(Si+N)varies in the above-specified range continuously or stepwise, morepreferably continuously, in thickness direction.

In a preferred embodiment, the halftone phase shift film includes thetransition metal/silicon/nitrogen-containing layer which includes aregion where an atomic ratio of silicon to the sum of silicon andnitrogen, Si/(Si+N), varies continuously or stepwise, preferablycontinuously, in thickness direction. More preferably, the differencebetween maximum and minimum of the atomic ratio Si/(Si+N) in thicknessdirection is up to 0.25, especially up to 0.15. The halftone phase shiftfilm of such construction is especially improved in adhesion and can beformed by the inventive method.

The structure of the halftone phase shift film that the transitionmetal/silicon/nitrogen-containing layer includes a region where anatomic ratio of silicon or nitrogen to the sum of silicon and nitrogenvaries continuously in thickness direction encompasses that thetransition metal/silicon/nitrogen-containing layer includes acompositionally continuously graded region; the structure of thehalftone phase shift film that the transitionmetal/silicon/nitrogen-containing layer includes a region where anatomic ratio of silicon or nitrogen to the sum of silicon and nitrogenvaries stepwise in thickness direction encompasses that the transitionmetal/silicon/nitrogen-containing layer includes a compositionallystepwise graded region. The compositionally graded region in thetransition metal/silicon/nitrogen-containing layer encompasses both aregion where silicon or nitrogen increases or decreases linearly, and aregion where silicon or nitrogen increases and decreases in a zigzagway.

The transition metal/silicon/nitrogen-containing layer in the halftonephase shift film is formed of a silicon base material containingtransition metal, silicon and nitrogen. The transition metal/siliconbase material is preferably a transition metal/silicon base materialcontaining at least 90 at %, more preferably at least 94 at % oftransition metal, silicon and nitrogen in total. Although the transitionmetal/silicon base material may contain oxygen, the content of oxygen ispreferably up to 10 at %, especially up to 6 at %. The silicon basematerial should preferably have a lower oxygen content and morepreferably be free of oxygen, in order to form a thinner film. It ispreferred from this standpoint that the transitionmetal/silicon/nitrogen-containing layer include a layer of a materialconsisting of transition metal, silicon and nitrogen and more preferablybe a layer of a material consisting of transition metal, silicon andnitrogen.

In the embodiment wherein the halftone phase shift film includes thetransition metal/silicon/nitrogen-containing layer as a part or theentirety thereof, the transition metal/silicon/nitrogen-containing layeris preferably such that an atomic ratio of transition metal (Me) to thesum of transition metal and silicon, Me/(Si+Me), is up to 0.05/1, morepreferably up to 0.03/1 and at least 0.001/1, more preferably at least0.0025/1, even more preferably at least 0.005/1. Suitable transitionmetals include molybdenum, zirconium, tungsten, titanium, hafnium,chromium and tantalum, with molybdenum being most preferred. The use ofsuch transition metal/silicon base material having a low transitionmetal content overcomes the problem of pattern size variationdegradation associated with transition metal/silicon base materials andimproves chemical resistance during chemical cleaning.

The transition metal/silicon/nitrogen-containing layer in the halftonephase shift film is preferably formed in its entirety (excluding thesurface oxidized layer if any) of a transition metal/silicon basematerial having a transition metal content of at least 0.1 at %, morepreferably at least 0.2 at %, even more preferably at least 0.5 at % andup to 3 at %, more preferably up to 2 at %.

The transition metal/silicon/nitrogen-containing layer in the halftonephase shift film is preferably formed in its entirety (excluding thesurface oxidized layer if any) of a transition metal/silicon basematerial having a silicon content of at least 35 at %, more preferablyat least 43 at % and up to 80 at %, more preferably up to 75 at %.

The transition metal/silicon/nitrogen-containing layer in the halftonephase shift film is preferably formed in its entirety (excluding thesurface oxidized layer if any) of a transition metal/silicon basematerial having a nitrogen content of at least 20 at %, more preferablyat least 25 at % and up to 60 at %, more preferably up to 57 at %.

The transition metal/silicon/nitrogen-containing layer in the halftonephase shift film is preferably formed in its entirety (excluding thesurface oxidized layer if any) of a transition metal/silicon basematerial having an oxygen content of up to 10 at %, more preferably upto 6 at %.

With respect to the construction of the halftone phase shift film, afilm including a portion (on the surface side) remote from the substratewhich has a low transition metal and silicon content is effective forimproving chemical resistance, and a film including a portion (on thesurface side) remote from the substrate or a portion (on the substrateside) close to the substrate which has a low transition metal andsilicon content is effective for reducing reflectivity. On the otherhand, from the standpoint of control during etching of the halftonephase shift film, it is preferred that a portion close to the substratehave a high transition metal and silicon content.

The halftone phase shift film may be constructed by multiple layers aslong as the benefits of the invention are obtainable. Where the halftonephase shift film includes a transition metal/silicon/nitrogen-containinglayer as a part, the balance may be a layer or layers other than thetransition metal/silicon/nitrogen-containing layer. Where the halftonephase shift film is a multilayer film, it may be a combination of two ormore layers selected from layers composed of different constituents andlayers composed of identical constituents in different compositionalratios. Where the halftone phase shift film is constructed by three ormore layers, a combination of identical layers is acceptable as long asthey are not contiguous to each other. The halftone phase shift filmcomposed of layers consisting of identical constituents is advantageousin that it can be etched with a common etchant.

The halftone phase shift film may be composed of a single layer ormultiple layers as long as a phase shift and a transmittance necessaryfor the halftone phase shift function are met. For example, the film maybe composed of multiple layers including an antireflective functionlayer so that the overall film may meet a predetermined surfacereflectance as well as the necessary phase shift and transmittance.

In the halftone phase shift photomask blank of the invention, a secondfilm of single layer or multilayer structure may be formed on thehalftone phase shift film. Most often, the second film is disposedcontiguous to the halftone phase shift film. Examples of the second filminclude a light-shielding film, a combination of light-shielding filmand antireflective film, and an auxiliary film which functions as a hardmask during subsequent pattern formation of the halftone phase shiftfilm. When a third film is formed as will be described later, the secondfilm may be utilized as an auxiliary film (etching stop film) whichfunctions as an etching stopper during subsequent pattern formation ofthe third film. The second film is preferably composed of achromium-containing material.

One exemplary embodiment is a halftone phase shift photomask blankillustrated in FIG. 2A. The halftone phase shift photomask blankdepicted at 100 in FIG. 2A includes a transparent substrate 10, ahalftone phase shift film 1 formed on the substrate, and a second film 2formed on the film 1.

The halftone phase shift photomask blank may include a light-shieldingfilm as the second film on the halftone phase shift film. A combinationof a light-shielding film and an antireflective film may also be used asthe second film. The provision of the second film including alight-shielding film ensures that a halftone phase shift photomaskincludes a region capable of completely shielding exposure light. Thelight-shielding film and antireflective film may also be utilized as anauxiliary film during etching. The construction and material of thelight-shielding film and antireflective film are known from many patentdocuments, for example, Patent Document 4 (JP-A 2007-033469) and PatentDocument 5 (JP-A 2007-233179). One preferred film construction of thelight-shielding film and antireflective film is a structure having alight-shielding film of Cr-containing material and an antireflectivefilm of Cr-containing material for reducing reflection by thelight-shielding film. Each of the light-shielding film and theantireflective film may be a single layer or multilayer. SuitableCr-containing materials of which the light-shielding film andantireflective film are made include chromium alone, chromium oxide(CrO), chromium nitride (CrN), chromium carbide (CrC), chromiumoxynitride (CrON), chromium oxycarbide (CrOC), chromium nitride carbide(CrNC), chromium oxynitride carbide (CrONC) and other chromiumcompounds.

The chromium base light-shielding film and chromium base antireflectivefilm may be deposited by reactive sputtering using a chromium target ora chromium target having one or more of oxygen, nitrogen and carbonadded thereto, and a sputtering gas based on a rare gas such as Ar, Heor Ne, to which a reactive gas selected from oxygen-containing gas,nitrogen-containing gas and carbon-containing gas is added depending onthe desired composition of a film to be deposited.

Where the second film is a light-shielding film or a combination of alight-shielding film and an antireflective film, the light-shieldingfilm is made of a chromium base material having a chromium content of atleast 30 at %, especially at least 35 at % and less than 100 at %,preferably up to 99 at %, and more preferably up to 90 at %. Thechromium base material has an oxygen content of at least 0 at % and upto 60 at %, preferably up to 50 at %, with an oxygen content of at least1 at % being preferred when an etching rate must be adjusted. Thechromium base material has a nitrogen content of at least 0 at % and upto 50 at %, preferably up to 40 at %, with a nitrogen content of atleast 1 at % being preferred when an etching rate must be adjusted. Thechromium base material has a carbon content of at least 0 at % and up to30 at %, preferably up to 20 at %, with a carbon content of at least 1at % being preferred when an etching rate must be adjusted. The totalcontent of chromium, oxygen, nitrogen and carbon is preferably at least95 at %, more preferably at least 99 at %, and especially 100 at %.

Where the second film is a combination of a light-shielding film and anantireflective film, the antireflective film is preferably made of achromium-containing material having a chromium content of preferably atleast 30 at %, more preferably at least 35 at % and preferably up to 70at %, and more preferably up to 50 at %. The chromium-containingmaterial preferably has an oxygen content of up to 60 at %, and at least1 at % and more preferably at least 20 at %. The chromium-containingmaterial preferably has a nitrogen content of up to 50 at %, morepreferably up to 30 at %, and at least 1 at %, more preferably at least3 at %. The chromium-containing material preferably has a carbon contentof at least 0 at % and up to 30 at %, more preferably up to 20 at %,with a carbon content of at least 1 at % being preferred when an etchingrate must be adjusted. The total content of chromium, oxygen, nitrogenand carbon is preferably at least 95 at %, more preferably at least 99at %, and especially 100 at %.

Where the second film is an auxiliary film (etching mask film) whichfunctions as a hard mask during pattern formation of the halftone phaseshift film, the auxiliary film is preferably composed of a materialhaving different etching properties from the halftone phase shift film,for example, a material having resistance to fluorine dry etchingapplied to the etching of silicon-containing material, specifically achromium-containing material which can be etched with oxygen-containingchlorine gas. Suitable chromium-containing materials include chromiumalone, chromium oxide (CrO), chromium nitride (CrN), chromium carbide(CrC), chromium oxynitride (CrON), chromium oxycarbide (CrOC), chromiumnitride carbide (CrNC), chromium oxynitride carbide (CrONC) and otherchromium compounds.

Where the second film is an auxiliary film, the film preferably has achromium content of preferably at least 30 at %, more preferably atleast 35 at % and up to 100 at %, more preferably up to 99 at %, andeven more preferably up to 90 at %. The film has an oxygen content of atleast 0 at %, and up to 60 at %, preferably up to 55 at %, with anoxygen content of at least 1 at % being preferred when an etching ratemust be adjusted. The film has a nitrogen content of at least 0 at %,and up to 50 at %, preferably up to 40 at %, with a nitrogen content ofat least 1 at % being preferred when an etching rate must be adjusted.The film has a carbon content of at least 0 at % and up to 30 at %,preferably up to 20 at %, with a carbon content of at least 1 at % beingpreferred when an etching rate must be adjusted. The total content ofchromium, oxygen, nitrogen and carbon is preferably at least 95 at %,more preferably at least 99 at %, and especially 100 at %.

Where the second film is a light-shielding film or a combination of alight-shielding film and an antireflective film, the second film has athickness of typically 20 to 100 nm, preferably 40 to 70 nm. Also thehalftone phase shift film combined with the second film shouldpreferably have a total optical density of at least 2.0, more preferablyat least 2.5, and even more preferably at least 3.0, with respect toexposure light of wavelength up to 250 nm, especially up to 200 nm.

In the halftone phase shift photomask blank of the invention, a thirdfilm of single layer or multilayer structure may be formed on the secondfilm. Most often, the third film is disposed contiguous to the secondfilm. Examples of the third film include a light-shielding film, acombination of light-shielding film and antireflective film, and anauxiliary film which functions as a hard mask during subsequent patternformation of the second film. The third film is preferably composed of asilicon-containing material, especially chromium-free silicon-containingmaterial.

One exemplary embodiment is a halftone phase shift photomask blankillustrated in FIG. 2B. The halftone phase shift photomask blankdepicted at 100 in FIG. 2B includes a transparent substrate 10, ahalftone phase shift film 1 formed on the substrate, a second film 2formed on the film 1, and a third film 3 formed on the second film 2.

Where the second film is a light-shielding film, a combination of alight-shielding to film and an antireflective film or an auxiliary filmwhich functions as a hard mask during pattern formation of the halftonephase shift film, the third film may be an auxiliary film (etching maskfilm) which functions as a hard mask during subsequent pattern formationof the second film. When a fourth film is formed as will be describedlater, the third film may be utilized as an auxiliary film (etching stopfilm) which functions as an etching stopper during subsequent patternformation of the fourth film. The auxiliary film is preferably composedof a material having different etching properties from the second film,for example, a material having resistance to chlorine dry etchingapplied to the etching of chromium-containing material, specifically asilicon-containing material which can be etched with fluoride gas suchas SF₆ or CF₄. Suitable silicon-containing materials include siliconalone, a material containing silicon and one or both of nitrogen andoxygen, a material containing silicon and a transition metal, and amaterial containing silicon, one or both of nitrogen and oxygen, and atransition metal. Exemplary of the transition metal are molybdenum,tantalum and zirconium.

Where the third film is an auxiliary film, it is preferably composed ofa silicon-containing material having a silicon content of preferably atleast 20 at %, more preferably at least 33 at % and up to 95 at %, morepreferably up to 80 at %. The silicon-containing material has a nitrogencontent of at least 0 at % and up to 50 at %, preferably up to 40 at %,with a nitrogen content of at least 1 at % being preferred when anetching rate must be adjusted. The silicon-containing material has anoxygen content of at least 0 at %, preferably at least 20 at % and up to70 at %, preferably up to 66 at %, with an oxygen content of at least 1at % being preferred when an etching rate must be adjusted. Thesilicon-containing material has a transition metal content of at least 0at % and up to 35 at %, preferably up to 20 at %, with a transitionmetal content of at least 1 at % being preferred if present. The totalcontent of silicon, oxygen, nitrogen and transition metal is preferablyat least 95 at %, more preferably at least 99 at %, and especially 100at %.

Where the second film is a light-shielding film or a combination of alight-shielding film and an antireflective film and the third film is anauxiliary film, the second film has a thickness of typically 20 to 100nm, preferably 40 to 70 nm, and the third film has a thickness oftypically 1 to 30 nm, preferably 2 to 15 nm. Also the halftone phaseshift film combined with the second film should preferably have a totaloptical density of at least 2.0, more preferably at least 2.5, and evenmore preferably at least 3.0, with respect to exposure light ofwavelength up to 250 nm, especially up to 200 nm. Where the second filmis an auxiliary film and the third film is an auxiliary film, the secondfilm has a thickness of typically 1 to 100 nm, preferably 2 to 50 nm andthe third film has a thickness of typically 1 to 30 nm, preferably 2 to15 nm.

Where the second film is an auxiliary film, a light-shielding film maybe formed as the third film. Also, a combination of a light-shieldingfilm and an antireflective film may be formed as the third film. Hereinthe second film may be utilized as an auxiliary film (etching mask film)which functions as a hard mask during pattern formation of the halftonephase shift film, or an auxiliary film (etching stop film) whichfunctions as an etching stopper during pattern formation of the thirdfilm. Examples of the auxiliary film are films of chromium-containingmaterials as described in Patent Document 6 (JP-A 2007-241065). Theauxiliary film may be a single layer or multilayer. Suitablechromium-containing materials of which the auxiliary film is madeinclude chromium alone, chromium oxide (CrO), chromium nitride (CrN),chromium carbide (CrC), chromium oxynitride (CrON), chromium oxycarbide(CrOC), chromium nitride carbide (CrNC), chromium oxynitride carbide(CrONC) and other chromium compounds.

Where the second film is an auxiliary film, the film preferably has achromium content of preferably at least 30 at %, more preferably atleast 35 at % and up to 100 at %, more preferably up to 99 at %, andeven more preferably up to 90 at %. The film has an oxygen content of atleast 0 at %, and up to 60 at %, preferably up to 55 at %, with anoxygen content of at least 1 at % being preferred when an etching ratemust be adjusted. The film has a nitrogen content of at least 0 at %,and up to 50 at %, preferably up to 40 at %, with a nitrogen content ofat least 1 at % being preferred when an etching rate must be adjusted.The film has a carbon content of at least 0 at % and up to 30 at %,preferably up to 20 at %, with a carbon content of at least 1 at % beingpreferred when an etching rate must be adjusted. The total content ofchromium, oxygen, nitrogen and carbon is preferably at least 95 at %,more preferably at least 99 at %, and especially 100 at %.

On the other hand, the light-shielding film and antireflective film asthe third film are preferably composed of a material having differentetching properties from the second film, for example, a material havingresistance to chlorine dry etching applied to the etching ofchromium-containing material, specifically a silicon-containing materialwhich can be etched with fluoride gas such as SF₆ or CF₄. Suitablesilicon-containing materials include silicon alone, a materialcontaining silicon and nitrogen and/or oxygen, a material containingsilicon and a transition metal, and a material containing silicon,nitrogen and/or oxygen, and a transition metal. Exemplary of thetransition metal are molybdenum, tantalum and zirconium.

Where the third film is a light-shielding film or a combination of alight-shielding film and an antireflective film, the light-shieldingfilm and antireflective film are preferably composed of asilicon-containing material having a silicon content of preferably atleast 10 at %, more preferably at least 30 at % and less than 100 at %,more preferably up to 95 at %. The silicon-containing material has anitrogen content of at least 0 at % and up to 50 at %, preferably up to40 at %, especially up to 20 at %, with a nitrogen content of at least 1at % being preferred when an etching rate must be adjusted. Thesilicon-containing material has an oxygen content of at least 0 at %,and up to 60 at %, preferably up to 30 at %, with an oxygen content ofat least 1 at % being preferred when an etching rate must be adjusted.The silicon-containing material has a transition metal content of atleast 0 at % and up to 35 at %, preferably up to 20 at %, with atransition metal content of at least 1 at % being preferred if present.The total content of silicon, oxygen, nitrogen and transition metal ispreferably at least 95 at %, more preferably at least 99 at %, andespecially 100 at %.

Where the second film is an auxiliary film and the third film is alight-shielding film or a combination of a light-shielding film and anantireflective film, the second film has a thickness of typically 1 to20 nm, preferably 2 to 10 nm, and the third film has a thickness oftypically 20 to 100 nm, preferably 30 to 70 nm. Also the halftone phaseshift film combined with the second and third films should preferablyhave a total optical density of at least 2.0, more preferably at least2.5, and even more preferably at least 3.0, with respect to exposurelight of wavelength up to 250 nm, especially up to 200 nm.

In the halftone phase shift photomask blank of the invention, a fourthfilm of single layer or multilayer structure may be formed on the thirdfilm. Most often, the fourth film is disposed contiguous to the thirdfilm. Exemplary of the fourth film is an auxiliary film which functionsas a hard mask during subsequent pattern formation of the third film.The fourth film is preferably composed of a chromium-containingmaterial.

One exemplary embodiment is a halftone phase shift photomask blankillustrated in FIG. 2C. The halftone phase shift photomask blankdepicted at 100 in FIG. 2C includes a transparent substrate 10, ahalftone phase shift film 1 formed on the substrate, a second film 2formed on the film 1, a third film 3 formed on the second film 2, and afourth film 4 formed on the third film 3.

Where the third film is a light-shielding film or a combination of alight-shielding film and an antireflective film, the fourth film may bean auxiliary film (etching mask film) which functions as a hard maskduring subsequent pattern formation of the third film. The auxiliaryfilm is preferably composed of a material having different etchingproperties from the third film, for example, a material havingresistance to fluorine dry etching applied to the etching ofsilicon-containing material, specifically a chromium-containing materialwhich can be etched with oxygen-containing chloride gas. Suitablechromium-containing materials include chromium alone, chromium oxide(CrO), chromium nitride (CrN), chromium carbide (CrC), chromiumoxynitride (CrON), chromium oxycarbide (CrOC), chromium nitride carbide(CrNC), chromium oxynitride carbide (CrONC) and other chromiumcompounds.

Where the fourth film is an auxiliary film, the film has a chromiumcontent of at least 30 at %, preferably at least 35 at % and up to 100at %, preferably up to 99 at %, and more preferably up to 90 at %. Thefilm has an oxygen content of at least 0 at % and up to 60 at %,preferably up to 40 at %, with an oxygen content of at least 1 at %being preferred when an etching rate must be adjusted. The film has anitrogen content of at least 0 at % and up to 50 at %, preferably up to40 at %, with a nitrogen content of at least 1 at % being preferred whenan etching rate must be adjusted. The film has a carbon content of atleast 0 at % and up to 30 at %, preferably up to 20 at %, with a carboncontent of at least 1 at % being preferred when an etching rate must beadjusted. The total content of chromium, oxygen, nitrogen and carbon ispreferably at least 95 at %, more preferably at least 99 at %, andespecially 100 at %.

Where the second film is an auxiliary film, the third film is alight-shielding film or a combination of a light-shielding film and anantireflective film, and the fourth film is an auxiliary film; thesecond film has a thickness of typically 1 to 20 nm, preferably 2 to 10nm, the third film has a thickness of typically 20 to 100 nm, preferably30 to 70 nm, and the fourth film has a thickness of typically 1 to 30nm, preferably 2 to 20 nm. Also the halftone phase shift film combinedwith the second and third films should preferably have a total opticaldensity of at least 2.0, more preferably at least 2.5, and even morepreferably at least 3.0, with respect to exposure light of wavelength upto 250 nm, especially up to 200 nm.

The second and fourth films of chromium-containing materials may bedeposited by reactive sputtering using a chromium target or a chromiumtarget having one or more of oxygen, nitrogen and carbon added thereto,and a sputtering gas based on a rare gas such as Ar, He or Ne, to whicha reactive gas selected from oxygen-containing gas, nitrogen-containinggas and carbon-containing gas is added depending on the desiredcomposition of a film to be deposited.

The third film of silicon-containing material may be deposited byreactive sputtering using a silicon target, silicon nitride target,target containing silicon and silicon nitride, transition metal target,or composite silicon/transition metal target, and a sputtering gas basedon a rare gas such as Ar, He or Ne, to which a reactive gas selectedfrom oxygen-containing gas, nitrogen-containing gas andcarbon-containing gas is added depending on the desired composition of afilm to be deposited.

The photomask blank may be processed into a photomask by a standardtechnique. For example, a halftone phase shift photomask blankcomprising a halftone phase shift film and a second film ofchromium-containing material deposited thereon may be processed asfollows. First, a resist film adapted for electron beam (EB) lithographyis formed on the second film of the halftone phase shift photomaskblank, exposed to a pattern of EB, and developed in a conventional way,forming a resist pattern. While the resist pattern thus obtained is usedas etching mask, oxygen-containing chlorine base dry etching is carriedout for transferring the resist pattern to the second film, obtaining apattern of the second film. Next, while the second film pattern is usedas etching mask, fluorine base dry etching is carried out fortransferring the pattern to the halftone phase shift film, obtaining apattern of the halftone phase shift film. If any region of the secondfilm is to be left, a resist pattern for protecting that region isformed on the second film. Thereafter, the portion of the second filmwhich is not protected with the resist pattern is removed byoxygen-containing chlorine base dry etching. The resist pattern isremoved in a conventional manner, yielding a halftone phase shiftphotomask.

In another example, a halftone phase shift photomask blank comprising ahalftone phase shift film, a light-shielding film or a light-shieldingfilm/antireflective film of chromium-containing material depositedthereon as a second film, and an auxiliary film of silicon-containingmaterial deposited thereon as a third film may be processed as follows.First, a resist film adapted for EB lithography is formed on the thirdfilm of the halftone phase shift photomask blank, exposed to a patternof EB, and developed in a conventional way, forming a resist pattern.While the resist pattern thus obtained is used as etching mask, fluorinebase dry etching is carried out for transferring the resist pattern tothe third film, obtaining a pattern of the third film. While the thirdfilm pattern thus obtained is used as etching mask, oxygen-containingchlorine base dry etching is carried out for transferring the third filmpattern to the second film, obtaining a pattern of the second film. Theresist pattern is removed at this point. Further, while the second filmpattern is used as etching mask, fluorine base dry etching is carriedout for transferring the second film pattern to the halftone phase shiftfilm to define a pattern of the halftone phase shift film and at thesame time, removing the third film pattern. If any region of the secondfilm is to be left, a resist pattern for protecting that region isformed on the second film. Thereafter, the portion of the second filmwhich is not protected with the resist pattern is removed byoxygen-containing chlorine base dry etching. The resist pattern isremoved in a conventional manner, yielding a halftone phase shiftphotomask.

In a further example, a halftone phase shift photomask blank comprisinga halftone phase shift film, an auxiliary film of chromium-containingmaterial deposited thereon as a second film, and a light-shielding filmor a light-shielding film/antireflective film of silicon-containingmaterial deposited on the second film as a third film may be processedas follows. First, a resist film adapted for EB lithography is formed onthe third film of the halftone phase shift photomask blank, exposed to apattern of EB, and developed in a conventional way, forming a resistpattern. While the resist pattern thus obtained is used as etching mask,fluorine base dry etching is carried out for transferring the resistpattern to the third film, obtaining a pattern of the third film. Whilethe third film pattern thus obtained is used as etching mask,oxygen-containing chlorine base dry etching is carried out fortransferring the third film pattern to the second film, whereby apattern of the second film is obtained, that is, a portion of the secondfilm where the halftone phase shift film is to be removed is removed.The resist pattern is removed at this point. A resist pattern forprotecting a portion of the third film to be left is formed on the thirdfilm. Further, while the second film pattern is used as etching mask,fluorine base dry etching is carried out for transferring the secondfilm pattern to the halftone phase shift film to define a pattern of thehalftone phase shift film and at the same time, removing the portion ofthe third film which is not protected with the resist pattern. Theresist pattern is removed in a conventional manner. Finally,oxygen-containing chlorine base dry etching is carried out remove theportion of the second film where the third film has been removed,yielding a halftone phase shift photomask.

In a still further example, a halftone phase shift photomask blankcomprising a halftone phase shift film, an auxiliary film ofchromium-containing material deposited thereon as a second film, alight-shielding film or a light-shielding film/antireflective film ofsilicon-containing material deposited on the second film as a thirdfilm, and an auxiliary film of chromium-containing material deposited onthe third film as a fourth film may be processed as follows. First, aresist film adapted for EB lithography is formed on the fourth film ofthe halftone phase shift photomask blank, exposed to a pattern of EB,and developed in a conventional way, forming a resist pattern. While theresist pattern thus obtained is used as etching mask, oxygen-containingchlorine base dry etching is carried out for transferring the resistpattern to the fourth film, obtaining a pattern of the fourth film.While the fourth film pattern thus obtained is used as etching mask,fluorine base dry etching is carried out for transferring the fourthfilm pattern to the third film, obtaining a pattern of the third film.The resist pattern is removed at this point. A resist pattern forprotecting a portion of the third film to be left is formed on thefourth film. Further, while the third film pattern is used as etchingmask, oxygen-containing chlorine base dry etching is carried out fortransferring the third film pattern to the second film, obtaining apattern of the second film and at the same time, removing the portion ofthe fourth film which is not protected with the resist pattern. Next,while the second film pattern is used as etching mask, fluorine base dryetching is carried out for transferring the second film pattern to thehalftone phase shift film to define a pattern of the halftone phaseshift film and at the same time, removing the portion of the third filmwhich is not protected with the resist pattern. The resist pattern isremoved in a conventional manner. Finally, oxygen-containing chlorinebase dry etching is carried out to remove the portion of the second filmwhere the third film has been removed and the portion of the fourth filmwhere the resist pattern has been removed, yielding a halftone phaseshift photomask.

In a photolithographic method for forming a pattern with a half pitch ofup to 50 nm, typically up to 30 nm, and more typically up to 20 nm on aprocessable substrate, comprising the steps of forming a photoresistfilm on the processable substrate and exposing the photoresist film tolight of wavelength up to 250 nm, especially up to 200 nm, typically ArFexcimer laser (wavelength 193 nm) or F₂ laser (157 nm), through apatterned mask for transferring the pattern to the photoresist film, thehalftone phase shift photomask of the invention is best suited for usein the exposure step.

The halftone phase shift photomask obtained from the photomask blank isadvantageously applicable to the pattern forming process comprisingprojecting light to the photomask pattern including the pattern ofhalftone phase shift film for transferring the photomask pattern to anobject (photoresist film) on the processable substrate. The irradiationof exposure light may be either dry exposure or immersion exposure. Thehalftone phase shift photomask of the invention is effectiveparticularly when a wafer of at least 300 mm as the processablesubstrate is exposed to a photomask pattern of light by the immersionlithography with the tendency that a cumulative irradiation energy doseincreases within a relatively short time in commercial scalemicrofabrication.

EXAMPLE

Examples are given below for further illustrating the invention althoughthe invention is not limited thereto.

Example 1

In a chamber of a DC sputtering system, a quartz substrate of 152 mmsquares and 6.35 mm thick was placed. A silicon target (Si target) and amolybdenum silicide target (MoSi target) were used as the sputtertarget, and argon and nitrogen gases were used as the sputtering gas.The powers applied across the targets and the flow rate of argon gaswere kept constant. The current flow across the target was measuredwhile the flow rate of nitrogen gas was changed, obtaining a hysteresiscurve. Specifically, a power of 1.9 kW was applied across the Si target,a power of 35 W was applied across the MoSi target, argon gas was fed at21 sccm, and nitrogen gas was fed at 10 sccm into the chamber. In thisstate, sputtering was started. The flow rate of nitrogen gas wasincreased from 10 sccm by an increment of 0.17 sccm every second andfinally to 60 sccm. Thereafter, inversely the flow rate of nitrogen gaswas reduced from 60 sccm by a decrement of 0.17 sccm every second andfinally to 10 sccm. The current at the Si target was plotted relative tothe flow rate to draw a hysteresis curve as shown in FIG. 3. In FIG. 3,the solid-line curve represents the sputtering current recorded duringthe ascent of nitrogen gas flow rate and the broken-line curverepresents the sputtering current recorded during the descent ofnitrogen gas flow rate. A hysteresis region having upper and lowerlimits is defined between these curves.

Next, on the basis of the hysteresis curve of FIG. 3, sputtering wasperformed on a quartz substrate of 152 mm squares and 6.35 mm thick,using Si and MoSi targets as the sputter target, and nitrogen and argongases as the sputtering gas. Specifically, the power applied across theSi target was 1.9 kW, the power applied across the MoSi target was 35 W,the flow rate of argon gas was 21 sccm, and the flow rate of nitrogengas was continuously increased from 26 sccm to 47 sccm. A halftone phaseshift film of 65 nm thick was deposited. The halftone phase shift filmwas measured for phase shift and transmittance by a phaseshift/transmittance measurement system MPM193 (Lasertec Corp., the samesystem used in the following measurement). The film had a phase shift of179.4±0.4° and a transmittance of 6.1±0.05% with respect to light ofwavelength 193 nm, and the in-plane distributions of phase shift andtransmittance were narrow, indicating satisfactory in-plane uniformity.The halftone phase shift film was analyzed for composition by XPS,finding a substrate side composition of 52.3 at % Si and 46.8 at % N, asurface side (remote from the substrate) composition of 46.5 at % Si and52.1 at % N, and a continuously graded composition between the substrateside and the surface side. The film had a Mo content of 0.9 at % on thesubstrate side and 1.4 at % on the surface side (remote from thesubstrate). The film was regarded as having a substantially constant Mocontent despite a slight change.

Comparative Example 1

In a chamber of a DC sputtering system, a quartz substrate of 152 mmsquares and 6.35 mm thick was placed. A silicon target (Si target) wasused as the sputter target, and argon and nitrogen gases were used asthe sputtering gas. The power applied across the target and the flowrate of argon gas were kept constant. The current flow across the targetwas measured while the flow rate of nitrogen gas was changed, obtaininga hysteresis curve. Specifically, a power of 1.9 kW was applied acrossthe Si target, argon gas was fed at 17 sccm, and nitrogen gas was fed at10 sccm into the chamber. In this state, sputtering was started. Theflow rate of nitrogen gas was increased from 10 sccm by an increment of0.17 sccm every second and finally to 60 sccm. Thereafter, inversely theflow rate of nitrogen gas was reduced from 60 sccm by a decrement of0.17 sccm every second and finally to 10 sccm. The current on the Sitarget was plotted relative to the flow rate to draw a hysteresis curveas shown in FIG. 4. In FIG. 4, the solid-line curve represents thesputtering current recorded during the ascent of nitrogen gas flow rateand the broken-line curve represents the sputtering current recordedduring the descent of nitrogen gas flow rate.

Next, on the basis of the hysteresis curve of FIG. 4, sputtering wasperformed on a quartz substrate of 152 mm squares and 6.35 mm thick,using a Si target as the sputter target, and nitrogen and argon gases asthe sputtering gas. Specifically, the power applied across the Si targetwas 1.9 kW, the flow rate of argon gas was 17 sccm, and the flow rate ofnitrogen gas was kept constant at 28.6 sccm. A halftone phase shift filmof 61 nm thick was deposited. The halftone phase shift film had a phaseshift of 174.7±1.1° and a transmittance of 4.4±0.3% with respect tolight of wavelength 193 nm, and the in-plane distributions of phaseshift and transmittance were broad, indicating inferior in-planeuniformity. On XPS analysis, the halftone phase shift film had acomposition which was uniform in thickness direction.

Comparative Example 2

As in Example 1, a quartz substrate of 152 mm squares and 6.35 mm thickwas placed in a DC sputtering system, Si and MoSi targets were used asthe sputter target, and argon and nitrogen gases were used as thesputtering gas. On the basis of the hysteresis curve in Example 1,sputtering was performed on the quartz substrate. The power appliedacross the Si target was 1.9 kW, the power applied across the MoSitarget was 35 W, the flow rate of argon gas was 21 sccm, and the flowrate of nitrogen gas was kept constant at 31.5 sccm. A halftone phaseshift film of 63 nm thick was deposited. The halftone phase shift filmhad a phase shift of 179.6±0.5° and a transmittance of 4.7±0.3% withrespect to light of wavelength 193 nm, and the in-plane distribution oftransmittance was broad, indicating inferior in-plane uniformity. On XPSanalysis, the halftone phase shift film had a composition which wasuniform in thickness direction.

Japanese Patent Application No. 2016-190088 is incorporated herein byreference.

Although some preferred embodiments have been described, manymodifications and variations may be made thereto in light of the aboveteachings. It is therefore to be understood that the invention may bepracticed otherwise than as specifically described without departingfrom the scope of the appended claims.

1. A method for preparing a halftone phase shift photomask blank havinga halftone phase shift film on a transparent substrate, the methodcomprising the step of depositing a layer containing a transition metal,silicon and nitrogen on the transparent substrate, as a part or theentirety of the halftone phase shift film, by reactive sputtering usingone or more silicon-containing targets, an inert gas, and anitrogen-containing reactive gas, wherein provided that a hysteresiscurve is drawn by applying a power across the one or moresilicon-containing targets, feeding the reactive gas into a chamber,increasing and then decreasing the flow rate of the reactive gas forthereby sweeping the flow rate of the reactive gas, measuring asputtering voltage or current value across any one target upon sweepingof the flow rate of the reactive gas, and plotting the sputteringvoltage or current value versus the flow rate of the reactive gas, thestep of depositing a layer containing a transition metal, silicon andnitrogen includes a transition mode sputtering step of sputtering in aregion corresponding to a range from more than the lower limit ofreactive gas flow rate providing the hysteresis to less than the upperlimit, and in a part or the entirety of the transition mode sputteringstep, at least one parameter selected from the power applied across thetarget, the flow rate of the inert gas, and the flow rate of thereactive gas is increased or decreased continuously or stepwise.
 2. Themethod of claim 1 wherein the hysteresis curve is drawn by measuring asputtering voltage or current value across the target having the highestsilicon content among the one or more silicon-containing targets.
 3. Themethod of claim 1 wherein the one or more silicon-containing targets areselected from targets containing silicon, but not a transition metal andtargets containing a transition metal and silicon.
 4. The method ofclaim 1 wherein a target containing silicon and a target containing atransition metal, but not silicon are used.
 5. The method of claim 1wherein in the transition mode sputtering step, sputtering is carriedout while at least one parameter selected from the power applied acrossthe target, the flow rate of the inert gas, and the flow rate of thereactive gas is increased or decreased continuously such that the layercontaining transition metal, silicon and nitrogen may be compositionallygraded in thickness direction.
 6. The method of claim 1 wherein in theentirety of the transition mode sputtering step, sputtering is carriedout while at least one parameter selected from the power applied acrossthe target, the flow rate of the inert gas, and the flow rate of thereactive gas is increased or decreased continuously.
 7. The method ofclaim 1 wherein in the transition mode sputtering step, sputtering iscarried out while the flow rate of the reactive gas is increased ordecreased.
 8. The method of claim 1 wherein the step of depositing alayer containing a transition metal, silicon and nitrogen includes areaction mode sputtering step of sputtering in a region corresponding toa range equal to or more than the upper limit of reactive gas flow rateproviding the hysteresis, and the transition mode sputtering step isfollowed by the reaction mode sputtering step, or the reaction modesputtering step is followed by the transition mode sputtering step. 9.The method of claim 8 wherein in a part or the entirety of the reactionmode sputtering step, sputtering is carried out while at least oneparameter selected from the power applied across the target, the flowrate of the inert gas, and the flow rate of the reactive gas isincreased or decreased continuously or stepwise.
 10. The method of claim8 wherein from the transition mode sputtering step to the reaction modesputtering step, or from the reaction mode sputtering step to thetransition mode sputtering step, sputtering is carried out while atleast one parameter selected from the power applied across the target,the flow rate of the inert gas, and the flow rate of the reactive gas isincreased or decreased continuously.
 11. The method of claim 1 whereinthe step of depositing a layer containing a transition metal, siliconand nitrogen includes a metal mode sputtering step of sputtering in aregion corresponding to a range equal to or less than the lower limit ofreactive gas flow rate providing the hysteresis, and the metal modesputtering step is followed by the transition mode sputtering step, orthe transition mode sputtering step is followed by the metal modesputtering step.
 12. The method of claim 11 wherein in a part or theentirety of the metal mode sputtering step, sputtering is carried outwhile at least one parameter selected from the power applied across thetarget, the flow rate of the inert gas, and the flow rate of thereactive gas is increased or decreased continuously or stepwise.
 13. Themethod of claim 11 wherein from the metal mode sputtering step to thetransition mode sputtering step, or from the transition mode sputteringstep to the metal mode sputtering step, sputtering is carried out whileat least one parameter selected from the power applied across thetarget, the flow rate of the inert gas, and the flow rate of thereactive gas is increased or decreased continuously.
 14. The method ofclaim 1 wherein the inert gas is argon gas.
 15. The method of claim 1wherein the reactive gas is nitrogen gas.
 16. The method of claim 1wherein the layer containing a transition metal, silicon and nitrogenconsists of a transition metal, silicon and nitrogen.
 17. The method ofclaim 1 wherein the transition metal is molybdenum.